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As part of a "Wright Project" entitled
"Case Center for Surface Engineering,"
SCSAM will install a time-of-flight
secondary-ion mass spectrometer in 2009.
The new instrument, a TRIFT V nanoTOF made
by PHI, instrument is the latest generation
of PHI's surface analysis line of ToF-SIMS
instruments, utilizing a newly developed,
high-quality "TRIFT" analyzer. It will be
equipped with an Au, a C60, and
an Ar gun. An innovative new sample
handling platform enables analysis of
samples with complex geometries. In
addition, the system has state-of-the-art
charge compensation and ion gun
performance.
Time-of-flight secondary-ion mass
spectrometry (ToF-SIMS) provides
sub-micrometer elemental, chemical, and
molecular characterization and imaging of
solid surfaces. Different from D-SIMS
("dynamic" SIMS), this technique enables
analyzing the outermost one or two
mono-layers of a sample while basically
preserving molecular information. While
D-SIMS provides primarily elemental
information, ToF-SIMS surface analysis
yields chemical and molecular information.
ToF-SIMS is ideal for both organic ond
inorganic materials, and can be used to
characterize both insulating and conductive
samples. With detection limits in the ppm
to ppb range, shallow depth profiling
capabilities and automated analysis, the
nanoTOF can be used to study surface
contamination, trace impurities, thin
films, delamination failures etc. It is
also a valuable tool to investigate surface
modification chemistry and catalyst surface
composition.
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