EMSE514 (3): Defects in Semiconductors
Description:
Presentation of the main crystallographic defects in semiconductors; point defects (e.g., vacancies, interstitials, substitutional and interstitial impurities), line defects (e.g., dislocations), planar defects (e.g., grain boundaries). Structural, electrical and optical properties of various defects. Interpretation of the properties from the perspective of semiconductor physics and materials science and correlation of these defects to physical properties of the material. Experimental techniques including TEM, EBIC, CL, DLTS, etc. Prereq: EMSE 426.
Course Offering Plan: Bi-annually (lastest in Spring 2006) Course Evaluations (Case network ID and password required) |
